IRF230
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/00
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
VDS
VDGR
ID
ID
IDM
VGS
PD
ILM
EAS*
TJ , TSTG
TL
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage1
Drain - Gate Voltage (RGS = 20KW)1
Continuous Drain Current@ Tcase = 25°C
Continuous Drain Current@ Tcase = 100°C
Pulsed Drain Current 3
Gate – Source Voltage
Maximum Power Dissipation @ Tcase = 25°C
Derate Linearly
Inductive Current Clamped
Single Pulse Avalanche energy Rating 4
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFET
200
200
9.0
6.0
36
±20
75
0.6
36
150
–55 to 150
300
V
V
A
A
A
V
W
W/°C
A
mj
°C
°C
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Pin 1 – Gate Pin 2 – Source Case – Drain
NOTES
1 TJ = +25°C to + 150°C
2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2%
3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.
4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A
Characteristic Min. Typ. Max. Unit
°C/W
1.67
0.1
30
RqJC
RqCS
RqJA
Junction to Case
Case to Sink (Mounting Surface flat, smooth and greased.
Junction to Ambient (Free air operation)
THERMAL CHARACTERISTICS
Parameter Test Conditions Min. Typ. Max. Unit
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage forward
Gate Source Leakage Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain–Source On State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Continuous Source Current (Body Diode)
Pulsed Source Current1 (Body Diode)
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
VGS = 0V , ID = 250mA
VDS = VGS , ID = 250mA
VGS = 20V
VGS = -20V
VDS = Max rating VGS=0V
VDS = Max rating x0.8,
VGS=0V TJ = +125°C
VDS> ID(ON) xrDS(ON) Max.
VGS = 10V
VGS = 10V , IDS = 5.0A
VDS> 50V ID =5.0A
VGS = 0V, VDS = 25V
f = 1MHz
VGS = 10V ID = 9A
VDS = 0.8 VMax
VDD•100V, ID = 5.0A,
RG = 7.5W
Modified MOSFET
symbol showing the integral
reverse P-N junc. rectifier.
TJ = +25°C , IS = 9A
VGS = 0V
TJ = +150°C , IS = 9A
VGS = 0V dlF/dt = 100A/ms
TJ = +150°C , IS = 9A
VGS = 0V dlF/dt = 100A/ms
200
2 4
100
-100
250
1000
9
0.25 0.4
3.0 4.8
600
250
80
19 30
10
9.0
35
80
60
40
9.0
36
2.0
450
3.0
5.0
12.5
IRF230
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/00
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
BVDSS
VGS(TH)
IGSS
IGSS
IDSS
ID(ON)
2
rDS(ON)
2
gts
2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
IS
ISM
VSD
trr
Qrr
tON
LD
LS
V
V
nA
mA
A
W
S(W)
pF
nC
ns
A
V
ns
mC
nH
ELECTRICAL (Tcase = 25°C unless otherwise stated)
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance (from 6mm down source lead to source bond pad)
PACKAGE CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
NEGLIGIBLE
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